www.irf.com 1 3/25/01 IRF7468 smps mosfet hexfet ? power mosfet notes ? through ? are on page 8 symbol parameter typ. max. units r q jl junction-to-drain lead CCC 20 r q ja junction-to-ambient ? CCC 50 c/w thermal resistance absolute maximum ratings symbol parameter max. units v ds drain-source voltage 40 v v gs gate-to-source voltage 12 v i d @ t a = 25c continuous drain current, v gs @ 10v 9.4 i d @ t a = 70c continuous drain current, v gs @ 10v 7.5 a i dm pulsed drain current ? 75 p d @t a = 25c maximum power dissipation 2.5 w p d @t a = 70c maximum power dissipation 1.6 w linear derating factor 0. 02 mw/c t j , t stg junction and storage temperature range -55 to + 150 c so-8 top view 8 1 2 3 4 5 6 7 d d d d g s a s s a pd - 93914d v dss r ds(on) max(m w) w) w) w) w) i d 40v 15.5@v gs = 10v 9.4a applications benefits l ultra-low gate impedance l very low r ds(on) at 4.5v v gs l fully characterized avalanche voltage and current l high frequency isolated dc-dc converters with synchronous rectification for telecom and industrial use l high frequency buck converters for computer processor power
IRF7468 2 www.irf.com dynamic @ t j = 25c (unless otherwise specified) ns symbol parameter min. typ. max. units conditions g fs forward transconductance 27 CCC CCC s v ds = 20v, i d = 8.0a q g total gate charge CCC 23 34 i d = 8.0a q gs gate-to-source charge CCC 6.4 9.6 nc v ds = 20v q gd gate-to-drain ("miller") charge CCC 6.7 10 v gs = 4.5v, ? q oss output gate charge CCC 17 26 v gs = 0v, v ds = 16v t d(on) turn-on delay time CCC 7.6 CCC v dd = 20v t r rise time CCC 2.3 CCC i d = 8.0a t d(off) turn-off delay time CCC 20 CCC r g = 1.8 w t f fall time CCC 3.8 CCC v gs = 4.5v ? c iss input capacitance CCC 2460 CCC v gs = 0v c oss output capacitance CCC 490 CCC v ds = 20v c rss reverse transfer capacitance CCC 38 CCC pf ? = 1.0mhz symbol parameter typ. max. units e as single pulse avalanche energy ? CCC 160 mj i ar avalanche current ? CCC 8.0 a avalanche characteristics symbol parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ? CCC CCC p-n junction diode. CCC 0.81 1.3 v t j = 25c, i s = 8.0a, v gs = 0v ? CCC 0.65 CCC t j = 125c, i s = 8.0a, v gs = 0v ? t rr reverse recovery time CCC 45 68 ns t j = 25c, i f = 8.0a, v r =20v q rr reverse recovery charge CCC 76 110 nc di/dt = 100a/s ? t rr reverse recovery time CCC 58 87 ns t j = 125c, i f = 8.0a, v r =20v q rr reverse recovery charge CCC 110 160 nc di/dt = 100a/s ? s d g diode characteristics 2.3 74 a v sd diode forward voltage static @ t j = 25c (unless otherwise specified) i gss i dss drain-to-source leakage current r ds(on) static drain-to-source on-resistance m w a parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 40 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.025 CCC v/c reference to 25c, i d = 1ma CCC 11.7 15.5 v gs = 10v, i d = 9.4a ? CCC 13.0 17.0 v gs = 4.5v, i d = 7.5a ? CCC 18.0 35.0 v gs = 4.5v, i d = 4.7a ? v gs(th) gate threshold voltage 0.8 CCC 2.0 v v ds = v gs , i d = 250a CCC CCC 20 v ds = 32v, v gs = 0v CCC CCC 100 v ds = 32v, v gs = 0v, t j = 125c gate-to-source forward leakage CCC CCC 200 v gs = 12v gate-to-source reverse leakage CCC CCC -200 na v gs = -12v
IRF7468 www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 1000 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 15v 10v 4.50v 3.00v 2.70v 2.50v 2.25v 2.00v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.0v 1 10 100 1000 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs 15v 10v 4.50v 3.00v 2.70v 2.50v 2.25v 2.00v v , drain-to-source volta g e (v) i , drain-to-source current (a) ds d 2.0v 0.1 1 10 100 2.0 2.4 2.8 3.2 3.6 v = 15v 20s pulse width ds v , gate-to-source volta g e (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j fig 4. normalized on-resistance vs. temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 4.5v 10a
IRF7468 4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 v ,source-to-drain volta g e (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a v , drain-to-source volta g e (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms fig 8. maximum safe operating area 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c, capacitance(pf) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 10 20 30 40 50 0 2 4 6 8 10 q , total gate char g e (nc) v , gate-to-source voltage (v) g gs i = d 8.0a v = 20v ds v = 32v ds
IRF7468 www.irf.com 5 fig 10. maximum effective transient thermal impedance, junction-to-case 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 6. on-resistance vs. drain current fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 4.5v + - v dd 25 50 75 100 125 150 0.0 2.0 4.0 6.0 8.0 10.0 t , case temperature ( c) i , drain current (a) c d
IRF7468 6 www.irf.com fig 13. on-resistance vs. gate voltage fig 12. on-resistance vs. drain current fig 13a&b. basic gate charge test circuit and waveform fig 14a&b. unclamped inductive test circuit and waveforms fig 14c. maximum avalanche energy vs. drain current d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - v gs q g q gs q gd v g charge t p v ( br ) dss i as r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 20v 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 v gs, gate -to -source voltage (v) 0.010 0.015 0.020 0.025 r ds(on) , drain-to -source on resistance ( w ) i d = 10a 25 50 75 100 125 150 0 100 200 300 400 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 3.6a 6.4a 8.0a 0 20406080100 i d , drain current (a) 0.010 0.012 0.014 0.016 0.018 0.020 r ds (on) , drain-to-source on resistance ( w ) v gs = 10v v gs = 4.5v
IRF7468 www.irf.com 7 so-8 package details k x 45 c 8x l 8x q h 0 .25 (.01 0) m a m a 0.10 (.004) b 8x 0.2 5 (.010 ) m c a s b s - c - 6x e - b - d e - a - 8 7 6 5 1 2 3 4 5 6 5 recommended footprint 0.72 (.028 ) 8x 1.78 (.070) 8x 6.46 ( .255 ) 1.27 ( .050 ) 3 x dim inc hes m illim e ter s m in m ax m in m ax a .0532 .0688 1.35 1.75 a1 .0040 .0098 0.10 0.25 b .014 .018 0.36 0.46 c .0075 .0098 0.19 0.25 d .189 .196 4.80 4.98 e .150 .157 3.81 3.99 e .050 b asic 1.27 ba sic e1 .025 b asic 0.635 ba sic h .2284 .2440 5.80 6.20 k .011 .019 0.28 0.48 l 0.16 .050 0.41 1.27 q 0 8 0 8 notes: 1. dimensioning and tolerancing per ansi y14.5m-1982. 2. c o n t r o ll in g d im e n s io n : in c h . 3. dimensions are show n in millimeters (inches). 4. o u tl in e c o n f o r m s to je d e c o u tl in e m s -01 2a a . dimension does not include mold protrusions m o ld p r o t r u s io n s n o t to e xc e e d 0.25 (.0 06 ). d im e n s io n s is th e le n g t h o f le a d f o r s o ld e r in g t o a s u b s tr a te .. 5 6 a1 e1 q so-8 part marking
IRF7468 8 www.irf.com ? repetitive rating; pulse width limited by max. junction temperature. notes: ? starting t j = 25c, l = 5.0mh r g = 25 w , i as = 8.0a. ? pulse width 400s; duty cycle 2%. ? when mounted on 1 inch square copper board, t<10 sec 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are show n in millimeters ( inc hes ) . 3. outline conforms to eia-481 & eia-541. so-8 tape and reel data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 1/01
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